Post-parting etch to smooth silicon sliders

Details Post-parting etch to smooth silicon sliders Post-parting etch to smooth silicon sliders

2006-01-10

2008-07-08

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000

Reexamination Certificate

active

07396770

ABSTRACT:
To smooth silicon sliders that have been parted from each other on a wafer by DRIE, an isotropic etch using fluorine either in a gas or in an aqueous solution is performed prior to separating the individual sliders from the wafer.

REFERENCES:
patent: 5462637 (1995-10-01), Thiele
patent: 5650043 (1997-07-01), Kaji et al.
patent: 5772493 (1998-06-01), Rottmayer et al.
patent: 5997700 (1999-12-01), Fukushima et al.
patent: 6001268 (1999-12-01), Nguyen et al.
patent: 6027571 (2000-02-01), Kikuyama et al.
patent: 6088907 (2000-07-01), Lee et al.
patent: 6556380 (2003-04-01), Bunch et al.
patent: 6623330 (2003-09-01), Fukuroi
patent: 6776690 (2004-08-01), Bunch et al.
patent: 6858537 (2005-02-01), Brewer
patent: 6859346 (2005-02-01), Meyer
patent: 2002/0089787 (2002-07-01), Lu et al.
patent: 2002/0104822 (2002-08-01), Naydenkov et al.
patent: 2003/0000919 (2003-01-01), Velebir, Jr.
patent: 2004/0045671 (2004-03-01), Rejda et al.
patent: 2004/0069318 (2004-04-01), Kanayama et al.
patent: 2004/0109258 (2004-06-01), Krause et al.
patent: 2004/0264050 (2004-12-01), Brock et al.
patent: 2152278 (1990-06-01), None
patent: 4114377 (1992-04-01), None
patent: 7326034 (1995-12-01), None
patent: 10172124 (1998-06-01), None
K. Itaya,. R. Sugawa, Y. Morita, H. Tokumoto, “Atomic Resolution Images of H-Terminated Si(111) Surfaces in Aqueous Solutions”, Appl Phys. Lett. 60 (20), May 18, 1992, pp. 2534-2536.
S.K. Yan, S. Peter, C.G. Takoudis, “Fundamentals of Two-Step Etching Techniques for Ideal Silicon-Hydrogen termination of Silicon (111)” J.Appl. Phys. 76 (7) Oct. 1, 1994 pp. 4107-4112.

Affiliated with

Also associated with

Rating

Post-parting etch to smooth silicon sliders does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Post-parting etch to smooth silicon sliders, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Post-parting etch to smooth silicon sliders will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3964218