Post-oxidation anneal of silicon dioxide

Details Post-oxidation anneal of silicon dioxide Post-oxidation anneal of silicon dioxide

1986-10-23

1988-11-15

Doll, John

Fishing, trapping, and vermin destroying

148DIG4, 357 91, 156DIG73, 437238, H01L 21265

Patent

active

047849754

ABSTRACT:
The insulating and stabiity characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from the oxygen-containing material of about 10.sup.-6 torr to about 10 torr during annealing temperatures of about 500.degree. C. to about 1200.degree. C. Such is carried out for a time sufficient to enhance the insulating and stability characteristics of the silicon dioxide insulator.

REFERENCES:
patent: 3925107 (1975-12-01), Gdula et al.
patent: 4154873 (1979-05-01), Hickox et al.
patent: 4214919 (1980-07-01), Young
patent: 4341818 (1982-07-01), Adams et al.
patent: 4585492 (1986-04-01), Weinberg et al.
patent: 4626450 (1986-12-01), Tani et al.
Montillo et al., "High Temperature Annealing of Oxidized Silicon Surfaces", J. Electrochem. Soc., vol. 118, p. 1463, No. 9, 1971.

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