Post-lapping cleaning process for silicon wafers

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

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134 3, B08B 312, C23G 102, C23G 114, H01L 2102

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active

058376623

ABSTRACT:
A process for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been lapped. The process comprises contacting the wafer with an oxidizing agent to oxidize organic contaminants which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising citric acid into which sonic energy is being directed to remove metallic contaminants which may be present on the surface of the wafer. After being immersed in the citric acid bath, the wafer is contacted with hydrofluoric acid to remove a layer of silicon dioxide which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising an alkaline component and a surfactant, and into which sonic energy is being directed.

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