Post hot working process for semiconductors

Details Post hot working process for semiconductors Post hot working process for semiconductors

1995-01-18

1996-08-20

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437180, 437203, H01L 2144

Patent

active

055479022

ABSTRACT:
A post-hot metal deposition process applied to semiconductor wafer manufacturing in order to increase the size of grain structures and improve electromigration resistance in semiconductor devices. A highly ductile metal is first deposited onto a semiconductor substrate having contact points in a partial vacuum. A forge is applied to the substrate--with the highly ductile metal deposited thereon, to form a smooth conductive surface on the substrate, even at the contact points. The forging is done at an appropriate pressure and temperature to perform hot-working of the metal onto the contact points of the substrate. The forge may be used to emboss a conductor image of the highly ductile metal deposited on the substrate. The forging process may be performed by either stamping a surface onto the substrate or by rolling a surface onto the substrate.

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patent: 5127146 (1992-07-01), Wittenauer
patent: 5308792 (1994-05-01), Okabayashi et al.

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