Post-facto correction for cross coupling in a flash memory

Details Post-facto correction for cross coupling in a flash memory Post-facto correction for cross coupling in a flash memory

2011-08-02

2011-08-02

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185180

Reexamination Certificate

active

07990764

ABSTRACT:
A method of storing and reading data, using a memory that includes a plurality of cells (e.g. flash cells), such that data are stored in the cells by setting respective values of a physical parameter of the cells (e.g. threshold voltage) to be indicative of the data, and such that data are read from the cells by measuring those values. One of the cells and its neighbors are read. The data stored in the cell are estimated, based on the measurements and on respective extents to which the neighbors disturb the reading. Preferably, the method also includes determining those respective extents to which the neighbors disturb the reading, for example based on the measurements themselves.

REFERENCES:
patent: 7423912 (2008-09-01), Perlegos et al.
patent: 7684237 (2010-03-01), Moschiano et al.
patent: 2008/0298127 (2008-12-01), Kim et al.

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