Post diffusion after temperature gradient zone melting

Details Post diffusion after temperature gradient zone melting Post diffusion after temperature gradient zone melting

1975-11-26

1977-05-03

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148172, 148186, 148187, 148188, 148177, 148179, 252 623GA, 252 623E, H01L 21228

Patent

active

040212696

ABSTRACT:
Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a short diffusion cycle following thermomigration. The cycle smooths out discontinuities caused by breaks in wire migration and effectively seals and isolates occluded particles of the impurity remaining in the semiconductor body. The cycle is also useful for providing large area doped regions that cannot be formed by wire migration due to constraints on wire direction.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3936319 (1976-02-01), Anthony et al.
patent: 3972741 (1976-08-01), Anthony et al.

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