Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...
Reexamination Certificate
2006-01-10
2006-01-10
Ogden, Necholus (Department: 1751)
Cleaning compositions for solid surfaces, auxiliary compositions
Cleaning compositions or processes of preparing
For cleaning a specific substrate or removing a specific...
C510S176000, C510S488000, C510S499000, C134S001300, C134S002000, C438S689000, C438S691000, C451S028000, C451S036000
Reexamination Certificate
active
06984613
ABSTRACT:
The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.1% to 10% by volume of the cleaning solution.
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Guthrie Hung-Chin
Jiang Ming
Lara Nick
Guillot Robert O.
Hitachi Global Storage Technologies - Netherlands B.V.
Intellectual Property Law Offices
Ogden Necholus
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