Post-chemical mechanical planarization clean-up process using po

Details Post-chemical mechanical planarization clean-up process using po Post-chemical mechanical planarization clean-up process using po

1996-03-19

1999-12-07

El-Arini, Zeinab

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 2, 134 3, 134 6, 134 7, 134 1, 134 26, 134 32, 134 33, 134902, 156636, B08B 102, B08B 312, C03C 1500, C23G 102

Patent

active

059965940

ABSTRACT:
A post chemical-mechanical polishing clean-up process. Particles and ionic and metallic contaminants remaining on wafer 32 surface after CMP are removed and scratches are smoothed. The wafer 32 may be subjected to a high pressure/high rotational speed rinse at spindle rinse station 42 followed by buffing of the wafer 32 on a second polishing platen 38. If desired, a second high pressure/high speed rinse at spindle rinse station 42 may be performed after the buffing step. The wafer 32 may then be then transferred to a tank 50 for a megasonic bath and after the megasonic bath, the wafer 32 is transferred to a scrubber 44, which scrubs both surfaces of the wafer 32 with brushes and then spins the wafer 32 dry as spin station 84. All transfers are performed in a solution such as DI water to prevent drying of slurry on the wafer surface.

REFERENCES:
patent: 5375291 (1994-12-01), Tateyama et al.
patent: 5518552 (1996-05-01), Tanoue et al.
patent: 5597443 (1997-01-01), Hempel
Sivaram, Srinivasan, "Planarizing Interlevel Dielectrics by Chemical-Mechanical Polishing", Solid State Technology, May 1992, pp. 87-91.
Iqbal Ali, Sudipto R. Roy and Gregory B. Shinn, Texas Instruments; Srini Raghavan, University of Arizona; and Raj Shah and Shelley Peterman, Semateck; "Investigating the Effect of Secondary Platen Pressure on Post-Chemical-Mechanical Planarization Cleaning"; Microcontamination Journal, Oct. 1994, pp. 45-50.

Affiliated with

Also associated with

Rating

Post-chemical mechanical planarization clean-up process using po does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Post-chemical mechanical planarization clean-up process using po, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Post-chemical mechanical planarization clean-up process using po will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-813028