Positron beam lithography

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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H01J 37317

Patent

active

052626512

ABSTRACT:
Resist (402) is exposed by a beam of positrons (320) in an apparatus (300) similar to an electron beam lithography machine.

REFERENCES:
patent: 4864131 (1989-09-01), Rich et al.
patent: 5175075 (1992-12-01), Frazier et al.
Thomson, Scanning Electron Microscopy/1976 (Part IV), Apr. 5-9, 1976, pp. 633-640.

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