Positive-working photoresist containing o-naphthoquinone diazide

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

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430165, 430190, 430193, G03F 7023

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active

052815080

ABSTRACT:
A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.

REFERENCES:
patent: 4377631 (1983-03-01), Toukhy et al.
patent: 4404357 (1983-09-01), Taylor et al.
patent: 4587196 (1986-05-01), Toukhy
patent: 4731319 (1988-03-01), Kohara et al.
Pampalone, T. R., Solid State Tech., Jun. 1984, pp. 115-120.

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