Positive-working naphthoquinone diazide photoresist composition

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

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430165, 430193, 430326, G03C 154, G03C 160

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active

047313196

ABSTRACT:
A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.

REFERENCES:
patent: 4377631 (1983-03-01), Toukhy et al.
patent: 4404357 (1983-09-01), Taylor et al.
patent: 4551409 (1985-11-01), Gulla et al.
patent: 4587196 (1986-05-01), Toukhy
Pampalone, T. R., Solid State Technology, 6/1984, pp. 115-120.

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