Positive type resist material with trimethylsilylnitrile

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

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430191, 430192, G03C 160

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active

046862803

ABSTRACT:
A positive type resist material with high oxygen plasma resistance and a process for forming high resolution resist patterns using the resist material are disclosed. The positive type resist material comprises a photoactive resin, an organic solvent, and 5 to 50% by weight of trimethylsilylnitrile.
A compound of a phenol resin having phenolic hydroxyl groups and a photoactive compound, or phenolformaldehyde is used as an example of the photoactive resin. As the solvent, selected from the group consisting of 1,2-ethoxyl acetate, methyl ethyl ketone, xylene, and n-butyl acetate are used alone or in combination. The process for forming high resolution resist patterns comprises steps of forming a first resist layer for planarizing a wafer surface, forming a second resist layer on the first resist layer by using the above mentioned positive type resist material, forming patterns on the second resist layer by exposing the second resist layer to the exposure energy and developing, and transferring the patterns on the second resist layer to the first resist layer and the wafer by reactive ion etching using the second resist layer as an etching mask.

REFERENCES:
patent: 3615538 (1971-10-01), Peters et al.
patent: 4164421 (1979-08-01), Shinozaki et al.
patent: 4524196 (1985-01-01), Farnham et al.
Moran, J. M., et al., Bell Systems Tech. Journal, vol. 58, No. 5, 5-6/1979, pp. 1027-1036.
Ting, C. H. et al., "Multilayer Strategy for High Resolution Lithography", Intel Corp. NVW Tech. Development, pp. 139-149, CA95051.

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