Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...
Patent
1997-06-26
1999-06-15
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Diazo reproduction, process, composition, or product
Composition or product which contains radiation sensitive...
430165, 430192, 430193, G03F 7023
Patent
active
059121025
DESCRIPTION:
BRIEF SUMMARY
DESCRIPTION
1. Technical Field
The present invention relates to a positive resist composition, and more particularly to a positive resist composition suitable for use in minute processing required for the fabrication of semiconductor devices, magnetic bubble memory devices, integrated circuits and the like.
2. Background Art
In order to form a minute pattern using a resist, a solution containing a photosensitive material (a resist composition) is applied to a substrate and dried to form a photosensitive film, and the film is then exposed to active rays to form a latent image. The latent image is then developed to form a negative or positive image. Upon fabrication of a semiconductor device by minute processing making use of a resist, in general, a silicon wafer is used as a substrate to form an image (pattern) thereon by the above-described lithography technique. After etching the silicon wafer by using, as a protective film, the resist remaining on the substrate, the remaining resist film is removed. According to a positive resist, the solubility of an exposed part of a photosensitive film formed from the resist in a developer increases compared with that of an unexposed part to give a positive image. According to a negative resist on the other hand, the solubility of an exposed part of a photosensitive film formed from it decreases to give a negative image.
For example, a negative resist composed of cyclized polyisoprene and a bisdiazide compound has heretofore been known as a resist composition for the fabrication of semiconductor devices. However, this negative resist involves a drawback that it cannot be accommodated to the fabrication of semiconductors integrated to a high degree because the resist is developed with an organic solvent, so that it swells to a significant extent and there is hence a limit to its resolution. Besides, a negative resist comprising poly(glycidyl methacrylate) has high sensitivity, but is poor in resolution and resistance to dry etching.
On the other hand, positive resist compositions are believed that they can be satisfactorily accommodated to the integration of semiconductors to a high degree because they are excellent in resolution in contrast with the negative resist compositions. Positive resist compositions composed of an alkali-soluble resin such as a novolak resin, and a quinonediazide compound are in common use in this field at present. These positive resist compositions can be developed with an aqueous solution of an alkali and have excellent resolution. Further, the resolution of such a positive resist composition has been enhanced by improvement in its own performance and the development of a higher-performance aligner, so that formation of a minute pattern having a line width of 1 .mu.m or smaller has come to be feasible.
With respect to various properties such as sensitivity, film loss after development, resolution, thermal-flow resistance and storage stability, however, satisfactory results are not necessarily obtained from the conventional positive resist compositions. It is thus desired that the performance of the positive resist compositions be further enhanced.
In the formation of a minute pattern having a line width of 1 .mu.m or smaller, particularly 0.8 .mu.m or smaller, it is necessary to more strictly control dimensions of a resist pattern. There is accordingly a strong demand for development of a positive resist composition having higher dimensional accuracy.
It has recently been proposed to use, as a photosensitive agent, a quinonediazide sulfonate of each of various phenolic compounds (for example, Japanese Patent Application Laid-Open Nos. 296248/1990 and 296249/1990). However, the positive resist compositions specifically disclosed in these documents are somewhat insufficient in sensitivity, resolution, film loss after development, exposure margin or pattern profile. There is thus a demand for development of a further improved positive resist composition.
DISCLOSURE OF THE INVENTION
It is an object of the present invention to provide a posit
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Kashiwagi Motofumi
Kawata Shoji
Kusunoki Teturyo
Nakamura Masahiro
Chu John S.
Nippon Zeon Co. Ltd.
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