Positive quinone diazide photo-resist composition with antistati

Details Positive quinone diazide photo-resist composition with antistati Positive quinone diazide photo-resist composition with antistati

1989-09-18

1990-06-12

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430165, 430270, 430311, 430326, G03C 160

Patent

active

049332570

ABSTRACT:
Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.

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patent: 4338392 (1982-07-01), Engler et al.
patent: 4407927 (1983-10-01), Kamoshida et al.
patent: 4575480 (1986-03-01), Kotani et al.
patent: 4588671 (1986-05-01), Molodnyakov et al.
patent: 4613553 (1986-09-01), Risen et al.
patent: 4797353 (1989-01-01), Yamada et al.
English Translation of Japanese Kokai #59-93441 (Koizumi), Published 5/1984.
English Abstract of article entitled "Recent Development of Conducting Polymers", Kagaku, Sumitomo, vol. II, 1985, p.4-15, 1985.
Science and Industry, 59(3), 105-111 (1985) (Partial English Translation Submitted).

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