Positive photoresist material with o-quinone diazide and polymer

Details Positive photoresist material with o-quinone diazide and polymer Positive photoresist material with o-quinone diazide and polymer

1987-08-10

1989-09-12

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430156, 430165, 430312, 430313, 430323, 430326, G03C 160

Patent

active

048659452

ABSTRACT:
The present application describes a photoresist material which contains organo-silicon groups and the photoresist material is suitable for forming a micropattern applied in the fabrication of semiconductor integrated circuit and magnetic bubble memory elements. The photoresist material possesses high resistance to plasma etching using oxygen gas.

REFERENCES:
patent: 4395527 (1983-07-01), Berger
patent: 4510227 (1985-04-01), Mohr et al.
patent: 4521274 (1985-06-01), Reichmanis et al.
patent: 4587196 (1986-05-01), Toukhy
patent: 4603195 (1986-07-01), Babich et al.
patent: 4722881 (1988-02-01), Ueno et al.

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