Positive photoresist composition and patterning process...

Details Positive photoresist composition and patterning process... Positive photoresist composition and patterning process...

2006-04-11

2006-04-11

Chu, John S. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

C430S189000, C430S191000, C430S192000, C430S270100, C430S326000, C430S905000, C430S910000

Reexamination Certificate

active

07026091

ABSTRACT:
A positive photoresist with uniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

REFERENCES:
patent: 5976760 (1999-11-01), Oomori et al.
patent: 6787290 (2004-09-01), Nitta et al.

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