Positive ceramic semiconductor device

Electrical resistors – Incased – embedded – or housed – Element in insulation with outer metallic sheath

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338309, 357 65, H01L 2354, H01L 2348

Patent

active

048314323

ABSTRACT:
A positive ceramic semiconductor device having positive temperature coefficient of resistance comprises a pair of electrodes provided on a ceramic semiconductor substrate. One of the paired electrodes which is to serve as the positive pole is basically constituted by at least an electrically conductive layer of silver-palladium series containing silver and palladium at a predetermined ratio. For preventing a localized current concentration from occurring in the current conducting state, improvement is made as the structure of the positive pole electrode ormed of the electrically conductive material of silver-palladium series and/or the structure of the negative pole electrode. Silver-migration phenomenon on the positive ceramic semiconductor substrate as well as degradation of the mechanical strength thereof is positively prevented.

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patent: 4411863 (1983-10-01), Otsuka et al.
patent: 4458294 (1984-07-01), Womack
patent: 4579787 (1986-04-01), Heidsiek et al.
patent: 4663189 (1987-05-01), Borland

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