Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1990-11-05
1992-06-30
Mintel, William
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
357 19, 357 58, 2502061, 330 59, 330 69, 330260, H01L 2714
Patent
active
051268159
ABSTRACT:
A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductive layers is made of a transparent material, and at least the other conductive layer and the semiconductor layer are provided with a plurality of common apertures extending in the thickness direction. At least one of the conductor layers is provided with one or two pairs of electrodes of opposite polarity and positioned in its marginal regions. The sensor element is light transparent. A feedback circuit is provided to insure that the incident light is constant.
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Wendland et al., "Detectors: Inexpensive P-I-N Photodiodes Match Fiber, Source Characteristics," Electronics, Aug. 5, 1976, 101-2.
Hayashi Akimine
Konda Masataka
Murakami Satoru
Tawada Yoshihisa
Yamaguchi Minori
Kanegafuchi Chemical Industry Co. Ltd.
Mintel William
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