Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-10-04
2005-10-04
Smith, Brad (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S049000, C257S183000
Reexamination Certificate
active
06952026
ABSTRACT:
A radiation detector is of the type, which by use of electric signals, which indicates the position of an irradiated point on a detector surface of the detector. The detector includes a semiconductor wafer having at least two barrier layers, which are arranged in such manner that when applying an electric bias across the layers, one layer is reversely biased and the other if forwardly biased, the extension of the reversely biased barrier layer substantially coinciding with the detector surface. The detector further includes at least two conductive layers provided with at least one current collecting electrode, the conductive layers being arranged so as to allow a transistor amplification between the forwardly and reversely biased layer by use of charge currents generated by the radiation in the irradiated point and separated by the reversely biased barrier layer.
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Anssi J. Makynen et al: “CMOS Photodetectors for Industrial Position Sensing”,IEEE Transactions on Instrumentation and Measurement, vol. 43, nr. 3, pp. 489-492, ch. II and Fig. 1, Jun. 1994.
Anssi J. Makynen et al: “CMOS Photodetectors for Industrial Position Sensing”,IEEE Transactions on Instrumentation and Measurement, vol. 43, nr. 8, p. 490, ch. II and Fig. 1, Jun. 1994.
Harness & Dickey & Pierce P.L.C.
Sitek Electro Optics AB
Smith Brad
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