Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-10-10
2006-10-10
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C148S033000, C257S189000
Reexamination Certificate
active
07118934
ABSTRACT:
A porous substrate for epitaxial growth includes an underlying layer made of III-nitride semiconductor which is grown on a sapphire substrate, a void-formation preventive layer which is grown on the underlying layer, a porous III-nitride semiconductor layer and a porous metallic layer on the porous III-nitride semiconductor layer.
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Oshima Yuichi
Shibata Masatomo
Blum David S.
Foley & Lardner LLP
Hitachi Cable Ltd.
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