Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2003-06-26
2010-11-09
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S079000, C257SE33018
Reexamination Certificate
active
07829913
ABSTRACT:
A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.
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Eri Takeshi
Oshima Yuichi
Shibata Masatomo
Sunagawa Haruo
Usui Akira
Hitachi Cable Ltd.
NEC Corporation
Nguyen Cuong Q
Scully , Scott, Murphy & Presser, P.C.
Tran Trang Q
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