Porous siliconformation and etching process for use in silicon m

Details Porous siliconformation and etching process for use in silicon m Porous siliconformation and etching process for use in silicon m

1990-02-12

1991-02-26

Tufariello, T.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

C25F 312

Patent

active

049959549

ABSTRACT:
A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

REFERENCES:
"Fabrication of Silicon Microstructures Based on Selective Formation and hing of Porous Silicon", Journal Electrochemical Society, vol. 135, No. 8, Aug. 1988, pp. 2105-2107.
J. Benjamin, "Micromachining of Silicon by Selective Anodisation", Silicon Based Sensors, Mtg. of Instrument Science and Technology Group of the Institute of Physics, Briston, Eng., 1986, pp. 23-43.

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