Porous silicon with embedded tritium as a stand-alone prime powe

Details Porous silicon with embedded tritium as a stand-alone prime powe Porous silicon with embedded tritium as a stand-alone prime powe

1996-06-27

1998-06-16

Bowers, Jr., Charles L.

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Coating selected area

C25D 712

Patent

active

057656800

ABSTRACT:
An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

REFERENCES:
patent: 5272355 (1993-12-01), Namavar et al.
patent: 5285078 (1994-02-01), Mimura et al.
patent: 5301204 (1994-04-01), Cho et al.

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