Porous silicon trench and capacitor structures

Details Porous silicon trench and capacitor structures Porous silicon trench and capacitor structures

1995-05-04

1997-06-03

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438960, 438421, H01L 218242

Patent

active

056354193

ABSTRACT:
The invention provides a capacitor structure utilizing porous silicon as a first plate of the capacitor structure, thereby greatly increasing the surface area available for the capacitor and thereby the capacitance attainable. The invention also provides a trench structure having a porous silicon region surrounding the sidewalls thereof. Such a trench can then be utilized to form a capacitor according to the subject invention. Methods of producing the capacitor and trench structures according to the subject invention are also provided. Porous silicon is produced utilizing electrolytic anodic etching.

REFERENCES:
patent: 4967248 (1990-10-01), Shimizu
patent: 5068199 (1991-11-01), Sandhu
patent: 5254503 (1993-10-01), Kenney
patent: 5372962 (1994-12-01), Hirota et al.

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