Porous silicon photo-device capable of photoelectric conversion

Details Porous silicon photo-device capable of photoelectric conversion Porous silicon photo-device capable of photoelectric conversion

1995-04-12

1997-07-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

257 3, 257309, 257618, 257647, H01L 27095, H01L 2947, H01L 29812, H01L 3107

Patent

active

056441568

ABSTRACT:
A semiconductor device includes a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 .mu.m thick formed on the expanded surfaces of the porous silicon layer, wherein said expanded surfaces include internal surface of said pores.

REFERENCES:
patent: 5068199 (1991-11-01), Sandhu
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5445986 (1995-08-01), Hirota
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5527737 (1996-06-01), Jeng
Appl. Phy. Lett; 62(16); A.J. Steckl, et al.; Apr. 19, 1993, pp. 1982-1984 "Doping-Induced Selective Area Photoluminescence in Porous Silicon".

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