Porous silicon nitride ceramics and method for producing the...

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Reexamination Certificate

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C428S307300, C428S209000, C428S312200, C428S313300, C428S313900, C428S314400, C428S446000, C428S698000, C428S697000, C428S702000, C428S704000, C264S665000, C264S683000, C264S489000, C264S474000, C264S417000, C501S039000, C501S053000, C501S064000, C501S080000, C501S097100, C501S097200, C501S152000, C501S154000

Reexamination Certificate

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07041366

ABSTRACT:
The invention provides porous silicon nitride ceramics that having uniform, fine closed pores and a manufacturing method thereof. Metal Si powder is mixed with a sintering additive, followed by thermal treatment, which is a pre-process for forming a specific grain boundary phase. Two-stage thermal treatment is thereafter performed by microwave heating at a temperature of 1000° C. or more. The metal Si powder is thereafter subjected to a nitriding reaction from its surface, the metal Si is thereafter diffused to nitride formed on the outer shell thereof such that porous silicon nitride ceramics having uniform, fine closed pores can be produced. Having a high ratio of closed pores and being superior in electrical/mechanical characteristics, the porous silicon nitride ceramics can display excellent characteristics if used, for example, for an electronic circuit board that requires an anti-hygroscopicity, a low dielectric constant, a low dielectric loss, and mechanical strength.

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Translation of JP-08-228105.
Translation of JP-63-20915008.
Translation of JP-63209150.

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