Porous silicon carbide (SIC) semiconductor device

Details Porous silicon carbide (SIC) semiconductor device Porous silicon carbide (SIC) semiconductor device

1995-01-23

1996-10-29

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 76, 257 77, 257 80, 257103, H01L 4700, H01L 310312, H01L 2715, H01L 3300

Patent

active

055699324

ABSTRACT:
Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

REFERENCES:
patent: 5229625 (1993-07-01), Suzuki et al.
patent: 5285078 (1994-02-01), Mimura et al.
patent: 5298767 (1994-03-01), Shor et al.
patent: 5331180 (1994-07-01), Yamada et al.
patent: 5348618 (1994-09-01), Canham et al.

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