Porous silicon carbide (SiC) semiconductor device

Details Porous silicon carbide (SiC) semiconductor device Porous silicon carbide (SiC) semiconductor device

1992-10-06

1994-03-29

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 21, 257 22, 257 35, 257 46, 257 51, 437 87, 437 90, H01L 2900, H01L 2904, H01L 2120

Patent

active

052987671

ABSTRACT:
A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

REFERENCES:
patent: 3308356 (1967-03-01), Rutz
patent: 3396059 (1968-08-01), Giammanco
patent: 4028149 (1977-06-01), Deines et al.
patent: 4525429 (1985-06-01), Kaiser et al.
patent: 4531142 (1985-07-01), Weyrich et al.
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 5063421 (1991-11-01), Suzuki et al.
Nishino et al., "Blue-Emitting Diodes of 6H-SiC Prepared by CVD", Japanese Journal of Applied Physics, vol. 19, No. 7, pp. L353-L356, Jul. 1980.

Affiliated with

Also associated with

Rating

Porous silicon carbide (SiC) semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Porous silicon carbide (SiC) semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Porous silicon carbide (SiC) semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-794262