Porous silicon as a light source for rare earth-doped CaF.sub.2

Details Porous silicon as a light source for rare earth-doped CaF.sub.2 Porous silicon as a light source for rare earth-doped CaF.sub.2

1992-09-30

1994-04-05

Bovernick, Rodney B.

Coherent light generators

Particular pumping means

372 44, 372 50, H01S 309

Patent

active

053012046

ABSTRACT:
A method and apparatus (242) generates intense spectral emissions (68) by associating a porous-Si layer (230) with a rare earth-doped CaF.sub.2 film (234) so that the rare earth-doped CaF.sub.2 film absorbs optical emissions (222) from the porous-Si layer (230). Circuitry (228, 244, and 238) associated with the apparatus (242 and 226) activate the porous-Si layer (230) to produce the optical emissions (222). The porous-Si layer (230) may be formed electrically, by chemical vapor deposition, or by anodizing crystalline silicon.

REFERENCES:
patent: 5193098 (1993-03-01), Welch et al.

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