Porous silicon and method of preparing the same

Details Porous silicon and method of preparing the same Porous silicon and method of preparing the same

2011-07-05

2011-07-05

Xu, Ling (Department: 1784)

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Composite having voids in a component

C428S309900, C428S212000, C428S446000

Reexamination Certificate

active

07972687

ABSTRACT:
The present invention relates to a porous silicon material comprising one or more pore parts which include a first pore, a second pore, and a third pore. The first pore is formed in an upper side of the silicon. The second pore is formed in a lower side of the first pore and has a diameter that is larger or smaller than a diameter of the first pore. The third pore is formed in a lower side of the second pore and has a diameter that is identical or similar to the diameter of the first pore. The pore part having a double structure is formed in a silicon material. Since different electronic materials can be implanted into different pores of the porous silicon, it is easy to form interfaces of the implanted electronic materials.

REFERENCES:
patent: 2004/0146705 (2004-07-01), Den et al.
patent: 2006/0234391 (2006-10-01), Weiss et al.
patent: 1998-032008 (1998-07-01), None
patent: WO 95/16280 (1995-06-01), None

Affiliated with

Also associated with

Rating

Porous silicon and method of preparing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Porous silicon and method of preparing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Porous silicon and method of preparing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2682510