Porous Si 3 N 4 producing method

Details Porous Si 3 N 4 producing method Porous Si 3 N 4 producing method

2006-12-26

2006-12-26

Johnson, Edward M. (Department: 1754)

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

Reexamination Certificate

active

07153484

ABSTRACT:
A producing method of a porous Si3N4having high porosity and formed of Si3N4particles having a high aspect ratio includes the following steps. A compound of a rare earth element as a first sintering agent is mixed in an amount of 7.5–45 parts by mass, in terms of an oxide of the element, with respect to 100 parts by mass of Si powder to obtain mixed powder. A binder is added to the mixed powder, which is then molded into a molded body. The molded body is heated in a nitrogen atmosphere to 300–500° C. to remove the binder. The binder-removed body is heated in a nitrogen atmosphere to 1350–1500° C. for nitriding. The nitrided body is then sintered at 1750–1900° C. at a nitrogen pressure of 0.1–1 atmosphere.

REFERENCES:
patent: 5047186 (1991-09-01), Huckabee et al.
patent: 5126294 (1992-06-01), Hirosaki et al.
patent: 5213729 (1993-05-01), Edler et al.
patent: 5603877 (1997-02-01), Kato et al.
patent: 5804523 (1998-09-01), Oda et al.
patent: 5928601 (1999-07-01), Miyake et al.
patent: 6284690 (2001-09-01), Nakahata et al.
patent: 2001/0027158 (2001-10-01), Itoh et al.
patent: 2001/0036531 (2001-11-01), Shinohara et al.
patent: 0 653 392 (1995-05-01), None
patent: 0 669 295 (1995-08-01), None
patent: 0 757 024 (1997-02-01), None
patent: 0 784 038 (1997-07-01), None
patent: 0 940 377 (1999-09-01), None
patent: 1 298 110 (2003-04-01), None
patent: 1 498 400 (2005-01-01), None
patent: 11-60355 (1999-03-01), None
patent: P2001-316188 (2001-11-01), None
patent: P2002-284586 (2002-10-01), None
patent: WO 94/27929 (1994-12-01), None
Chemical Abstract & Indexes, American Chemical Society. Columbus, US, XP000353888.
Kawai C, “Effect Of Grain Size Distribution On The Strength Of Porous SI3N4 Ceramics Composed Of Elongated Beta-SI3N4 Grains” Dec. 1, 2001, pp. 5713-5717, XP001107807.
Search Report dated May 19, 2006.

Affiliated with

Also associated with

Rating

Porous Si 3 N 4 producing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Porous Si 3 N 4 producing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Porous Si 3 N 4 producing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3671293