Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1993-04-28
1994-07-19
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 10, 257 17, 257 22, 257 77, 257103, 257 95, H01L 3300
Patent
active
053311809
ABSTRACT:
An Si or SiC semiconductor layer is subjected to anodic oxidization in an HF solution to form a porous semiconductor layer. Without drying the porous semiconductor layer, it is then dipped in pure water. Ultrasonic waves applied to the pure water shorten the reaction time and help bubbles separate from the surface of the porous region. The porous semiconductor layer is used for forming a pn junction, and carriers are injected into the pn junction.
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Collins George J.
Nakano Moto'o
Takazawa Akira
Tamura Tetsuro
Yamada Masao
Fujitsu Limited
Mintel William
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