Porous semiconductor dopant carriers

Details Porous semiconductor dopant carriers Porous semiconductor dopant carriers

1983-06-08

1985-06-25

Sebastian, Leland A.

Stock material or miscellaneous articles

All metal or with adjacent metals

Having metal particles

29576R, 148 15, 148189, 264 59, 357 63, H01F 302

Patent

active

045254290

ABSTRACT:
New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant carrier comprised of SiC, elemental silicon or mixtures thereof.

REFERENCES:
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3951587 (1976-04-01), Alliegro et al.
patent: 4028149 (1977-06-01), Deines et al.
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4292264 (1981-09-01), Cota et al.
patent: 4381233 (1983-04-01), Adachi et al.

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