Etching a substrate: processes – Etching to produce porous or perforated article
Reexamination Certificate
2008-07-01
2008-07-01
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Etching to produce porous or perforated article
C216S022000
Reexamination Certificate
active
07393458
ABSTRACT:
There are provided a porous material and a process for producing the same. The porous material has a plurality of columnar pores and an area surrounding the pores, and the area is an amorphous area containing C, Si, Ge or a combination thereof.
REFERENCES:
patent: 5068152 (1991-11-01), Maro et al.
patent: 5244828 (1993-09-01), Okada et al.
patent: 5858457 (1999-01-01), Brinker et al.
patent: 6027796 (2000-02-01), Kondoh et al.
patent: 6045677 (2000-04-01), Beetz et al.
patent: 6214738 (2001-04-01), Aiba et al.
patent: 6265321 (2001-07-01), Chooi et al.
patent: 6464853 (2002-10-01), Iwasaki et al.
patent: 6525461 (2003-02-01), Iwasaki et al.
patent: 6541386 (2003-04-01), Aiba et al.
patent: 6602620 (2003-08-01), Kikitsu et al.
patent: 6610463 (2003-08-01), Ohkura et al.
patent: 6730421 (2004-05-01), Kirino et al.
patent: 2001/0036563 (2001-11-01), Watanabe et al.
patent: 2002/0014621 (2002-02-01), Den et al.
patent: 2002/0031008 (2002-03-01), Den et al.
patent: 2002/0086185 (2002-07-01), Yasui et al.
patent: 2003/0001150 (2003-01-01), Iwasaki et al.
patent: 2004/0001964 (2004-01-01), Ohkura et al.
patent: 2004/0033339 (2004-02-01), Fukutani et al.
patent: 2004/0048092 (2004-03-01), Yasui et al.
patent: 2005/0053773 (2005-03-01), Fukutani et al.
patent: 46-043414 (1971-12-01), None
patent: 52-78403 (1977-07-01), None
patent: 62-270473 (1987-11-01), None
patent: 63-220411 (1988-09-01), None
patent: 2-139714 (1990-05-01), None
patent: 5-55545 (1993-03-01), None
patent: 7-73429 (1995-03-01), None
patent: 9-157062 (1997-06-01), None
patent: 9-157062 (1997-06-01), None
patent: 2000-327491 (2000-11-01), None
patent: 2001-101644 (2001-04-01), None
patent: 2001-138300 (2001-05-01), None
patent: 2001-261376 (2001-09-01), None
patent: 2001-273622 (2001-10-01), None
patent: 01/071394 (2001-09-01), None
patent: WO 03/069677 (2003-08-01), None
patent: WO 03/078685 (2003-09-01), None
M. Jacobs et al., “Unbalanced Magnetron Sputtered Si-Al Coatings: Plasma Conditions and Film Properties Versus Sample Bias Voltage,” 116-119Surface and Coatings Technology735-41 (1999).
C.D. Adams et al., “Phase Separation During Co-Deposition of Al-Ge Thin Films,” 7(3)J. Mater. Res.653-67 (Mar. 1992).
C.D. Adams et al., “Transition from Lateral to Transverse Phase Separation During Film Co-deposition,” 59(20)Appl. Phys. Lett.2535-37 (Nov. 1991).
M. Atzmon et al., “Phase Separation During Film Growth,” 72(2)J. Appl. Phys.442-46 (Jul. 1992).
C.D. Adams, et al. “Monte Carlo Simulation of Phase Separation During Thin-Film Co-deposition,” 74(3)J. Appl. Phys.1707-15 (Aug. 1993).
N.E. Sluchanko et al., Physical Review B, The American Physical Society, 1996, vol. 53 (17), 11304-11306.
Den Tohru
Fukutani Kazuhiko
Canon Kabushiki Kaisha
Culbert Roberts
Fitzpatrick ,Cella, Harper & Scinto
LandOfFree
Porous material and production process thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Porous material and production process thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Porous material and production process thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2813624