Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2005-01-24
2010-11-23
Ghyka, Alexander G (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S252000, C257S253000, C257SE27001
Reexamination Certificate
active
07838949
ABSTRACT:
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
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Gole James L.
Hesketh Peter J.
Seals Lenward T.
Georgia Tech Research Corporation
Ghyka Alexander G
Thomas, Kayden, Horstemeyer and Risley, LLP
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