Porous gas sensors and method of preparation thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal

Reexamination Certificate

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C257S427000, C257S423000

Reexamination Certificate

active

07141859

ABSTRACT:
Devices including conductometric porous silicon gas sensors, methods of fabricating conductometric porous silicon gas sensors, methods of selecting a device, methods of detecting a concentration of a gas, and methods of analyzing data.

REFERENCES:
patent: 4294891 (1981-10-01), Yao et al.
patent: 5004424 (1991-04-01), Larminie
patent: 5074987 (1991-12-01), Thompson
patent: 5641585 (1997-06-01), Lessing et al.
patent: 5759712 (1998-06-01), Hockaday
patent: 6062210 (2000-05-01), Welles
patent: 6123828 (2000-09-01), Williams et al.
patent: 6289888 (2001-09-01), Welles
patent: 6312846 (2001-11-01), Marsh
patent: 6342071 (2002-01-01), Pless
patent: 6491391 (2002-12-01), Blum et al.
patent: 6517203 (2003-02-01), Blum et al.
patent: 6527943 (2003-03-01), Zhang et al.
patent: 6619799 (2003-09-01), Blum et al.
patent: 6627964 (2003-09-01), Nakashima et al.
patent: 6906392 (2005-06-01), Benzel et al.
patent: 7013708 (2006-03-01), Cho et al.
patent: 2002/0122972 (2002-09-01), Klitsner et al.
patent: 2003/0082431 (2003-05-01), Klitsner et al.
patent: 2003/0138685 (2003-07-01), Jankowski et al.
patent: 2003/0170515 (2003-09-01), Wang et al.
patent: 2003/0170520 (2003-09-01), Fujii et al.
Gole, DeVincentis, and Seals; Chloride salt enhancement and stabilization of the photoluminescence from a porous silicon surface; Feb. 15, 2000; Physical Review B; pp. 5615-5631.
Prokes, Carlos, Seals and Gole; Defect study of light-emitting HCI-treated porous silicon; Jul. 15, 2000; Physical Review B; pp. 1878-1882.
Gole, Seals and Lillehei; Patterned metallization for porous silicon from electroless solution for direct electrical contact; 2000; Journal of the Electrochemical Society; pp. S-5-27-S-5-31.
Gole, DeVincentis and Seals; Optical pumping of dye-complexed and sensitized porous silicon increasing photoluminescence emission rates; 1999; The Journal of Physical Chemistry B; pp. 979-987.
Propst and Kohl; The Electrochemical Oxidation for Silicon and Formation of Porous Silicon in Acetonitrile; Apr. 1994; J. Electrochem. Soc.; pp. 1006-1013.
Prokes; Surface and optical properties of porous silicon; Feb. 1996; J. Mater. Res.; pp. 305-320.
Collins, Fauchet and Tischler; Porous silicon; From luminescence to LEDS; Jan. 1997; Physics Today; pp. 24-31.
Cullis, Canham and Calcott; The structural and luminescence properties of porous silicon; 1997; Applied Physics Reviews; pp. 909-965.
Kanemitsu; Light emission from porous silicon and related materials; 1995; Physics Reports; pp. 1-91.
Canham; Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers; Sep. 1990; Appl. Phys. Letter; pp. 1046-1048.
John and Singh; Porous silicon: Theoretical studies; 1995; Physics Reports; pp. 93-151.
Koch, Petrova-Koch, Nikolov and Gavrilenko; Some perspectives on the luminescence mechanism via surface-confined states of porous Si; 1993; Mat. Res. Soc.; pp. 197-202.
Koch, Petrova-Koch and Muschik; The luminescence of porous Si: the case for the surface state mechanism; 1993; Journal of Luminescence; pp. 271-281.
Koch; Models and mechanisms for the luminescence of porous Si; 1993; Mat. Res. Soc.; pp. 319-329.
Gole and Dixon; Transformation, green to orange-red, of a porous silicon photoluminescent surface in solution; 1998; The Journal of Physical Chemistry B; pp. 33-39.
Gole and Dixon; Electrochemical methoxylation of an HF-etched porous silicon surface; 1998; The Journal of Physical Chemistry B; pp. 1768-1774.
Gole, Dudel and Seals; On the correlation of aqueous and nonaqueous in situ and ex situ photoluminescent emissions from porous silicon; 1998; J. Electrochem. Soc.; pp. 3284-3300.
Dudel and Gole; Stabilization of the photoluminescence from porous silicon: the competition between photoluminescence and dissolution; 1997; J. Appl. Phys.; pp. 402-406.
Seals, Dudel, Grantier and Gole; Trends in the interaction for the strong acids HCI, HBr, and HI with a photoluminescing porous silicon surface; 1997; The Journal of Physical Chemistry B; pp. 8860-8864.
Warntjes, Vieillard, Ozanam and Chazalviel; Electrochemical methozylation of porous silicon surface; Dec. 1995; J. Electrochem. Soc., pp. 4138-4142.
Gole, Dudel, Grantier and Dixon; Origin of porous silicon photoluminescence: Evidence for a surface bound oxyhydride-like emitter; Jul. 15, 1997; Physical Review B; pp. 2137-2153.
Dubin, Ozanam and Chazalviel; In situ luminescence and IR study of porous silicon during and after anodic oxidation; 1995; Thin Solid Films; pp. 87-91.
Koch and Kux; Prospects for infrared electroluminescence from porous silicon; 1993; Mat. Res. Soc.; pp. 391-396.
Fuchs, Rosenbauer, Brandt, Ernst, Finkbeiner, Stutzmann, Syassen, Weber, Queisser and Cardona; Visible luminescence from porous silicon and siloxene: recent results; 1993; Mat. Res. Soc.; pp. 203-208.
Lenward Seals, James L. Gole, Laam Angela Tse and Peter J. Hesketh; Rapid, Reversible, Sensitive Porous Silicon Gas Sensor; Journal of Applied Physics; Feb. 15, 2002; pp. 2519-2523.

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