Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2007-01-29
2009-06-16
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S467000, C257SE31001, C438S049000, C073S031060, C204S424000, C338S034000
Reexamination Certificate
active
07547953
ABSTRACT:
Gallium oxide films for sensing gas comprise Ga2O3and have a porosity of at least about 30%. Such films can be formed by coating a substrate with a solution comprising: a gallium salt and a porogen comprising an organic compound comprising a hydrophilic chain and a hydrophobic chain; and heating the substrate to a temperature in the range from about 400° C. to about 600° C. while exposing the substrate to an oxygen-containing source to convert the gallium salt to a gallium oxide.
REFERENCES:
patent: 4045729 (1977-08-01), Loh
patent: 5889198 (1999-03-01), Reitmeier
patent: 6012327 (2000-01-01), Seth
patent: 6387233 (2002-05-01), Guth et al.
Ku Anthony Yu-Chung
Loureiro Sergio Paulo Martins
Ruud James Anthony
Sandvik Peter Micah
Tian Wei-Cheng
DiConza Paul J.
General Electric Company
Ho Tu-Tu V
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