Porous film heat transfer

Details Porous film heat transfer Porous film heat transfer

1980-03-26

1983-05-03

Richter, Sheldon J.

Heat exchange

With coated, roughened or polished surface

62527, 165DIG10, 357 82, H01L 2342

Patent

active

043818188

ABSTRACT:
A silicon substrate adapted for large scale integrated electronic circuits upon a lower surface has its upper surface coated with a highly porous heat sink film. The film is composed of a porous metal, preferably aluminum, formed by vacuum deposition (evaporation or sputtering) at a high pressure of an inactive gas. The gas can have a pressure of from about 0.5-100 millitorr, and a suitable gas is argon. A porous aluminum film with interconnected nucleation sites which are in the form of reservoir type cavities is manufactured on a silicon surface. The cavities tend to trap vapor of a liquid coolant in contact with the thin film contained in a package enclosing the substrate and its integrated circuit. Cooling fins can be used to cool the coolant.

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