Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2005-03-03
2008-03-11
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257SE23141, C257SE23179, C257SE21524
Reexamination Certificate
active
07342295
ABSTRACT:
A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.
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Baum Thomas H.
Borovik Alexander S.
Xu Chongying
Advanced Technology & Materials Inc.
Chappuis Maggie
Hultquist Steven J.
Intellectual Property / Technology Law
Ngo Ngan V.
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