Polytype hetero-interface high electron mobility device and...

Details Polytype hetero-interface high electron mobility device and... Polytype hetero-interface high electron mobility device and...

2007-04-13

2010-06-29

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000, C257S192000

Reexamination Certificate

active

07745851

ABSTRACT:
A high electron mobility device and method of making is provided whereby a two-dimensional electron gas is formed at a hetero-junction or hetero-interface between different polytypes of a semiconductor material. The different crystal forms or polytypes of the semiconductor material having different electronic bandgaps are used to provide the bandgap necessary to form the two-dimensional electron gas.

REFERENCES:
patent: 7119380 (2006-10-01), Sankin et al.
patent: 7345309 (2008-03-01), Zhang et al.

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