Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy
Patent
1984-05-22
1985-08-20
Roy, Upendra
Metal treatment
Barrier layer stock material, p-n type
With contiguous layer doped to degeneracy
29576B, 29576T, 148 15, 148187, 148DIG93, 357 91, 427 531, H01L 21265, H01L 21263
Patent
active
045362319
ABSTRACT:
A method for forming a polysilicon thin film semiconductor device precursor, and the precursor, are disclosed, wherein the deposited thin film layer is scanned with a continuous wave laser in a first direction, and scanned a second time in a direction different from that of the first direction. The cross-scanning reduces the anisotropy of the thin film produced by the first scanning and apparently induces larger grain size in the recrystallized polysilicon.
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Stultz et al., in "Laser & Electron Beam . . . Solids" ed. Appleton et al., Elsevier, N.Y. 1981, p. 499.
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Harris Corporation
Roy Upendra
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