Polysilicon thin films of improved electrical uniformity

Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy

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29576B, 29576T, 148 15, 148187, 148DIG93, 357 91, 427 531, H01L 21265, H01L 21263

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active

045362319

ABSTRACT:
A method for forming a polysilicon thin film semiconductor device precursor, and the precursor, are disclosed, wherein the deposited thin film layer is scanned with a continuous wave laser in a first direction, and scanned a second time in a direction different from that of the first direction. The cross-scanning reduces the anisotropy of the thin film produced by the first scanning and apparently induces larger grain size in the recrystallized polysilicon.

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Stultz et al., in "Laser & Electron Beam . . . Solids" ed. Appleton et al., Elsevier, N.Y. 1981, p. 499.
Gibbons et al., Appl. Phys. Letts., 34 (1979) 831.

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