Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-12-30
1994-09-13
Ngo, Ngan Van
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 70, 257 72, 257351, 257352, 257354, H01L 2701, H01L 2713, H01L 2948
Patent
active
053471466
ABSTRACT:
A thin film transistor comprising a multi-layer structure including an amorphous silicon layer and a metal layer both forming source and drain regions. The source and drain regions have opposite exposed edges with a slant shape. An active semiconductor layer is disposed at a channel region defined between the source region and the drain region so that it is overlapped with the upper surface portions of the source and drain regions adjacent to their edges faced to each other. In a CMOS type thin film transistor, its n type TFT has a gate overlapped with the source and drain regions and its p type TFT has a gate offsetted from the source and drain region.
REFERENCES:
patent: 4849797 (1989-07-01), Ukai et al.
patent: 4851363 (1988-03-01), Troxell et al.
patent: 4864376 (1989-09-01), Aoki et al.
patent: 4951113 (1990-08-01), Huang et al.
Goldstar Co. Ltd.
Ngo Ngan Van
White John P.
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