Polysilicon thin film and method of preparing polysilicon thin f

Details Polysilicon thin film and method of preparing polysilicon thin f Polysilicon thin film and method of preparing polysilicon thin f

1994-06-22

1996-01-23

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

148 332, 257 51, 257 64, 257 75, 428620, 437 4, 437109, 437247, 437967, H01L 3104, H01L 310392, H01L 310368

Patent

active

054862370

ABSTRACT:
A polysilicon thin film obtained by using a heat treatment to crystallize an amorphous silicon thin film formed on a substrate has substantially no grain boundaries present in the direction of its thickness, i.e. substantially no grain boundaries extend across the thickness direction. Such a polysilicon thin film can be prepared by forming a doped first amorphous silicon layer containing dispersed crystal phases on a substrate, forming an undoped second amorphous silicon layer on the first amorphous silicon layer, and crystallizing the first and second amorphous silicon layers by heat treatment.

REFERENCES:
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patent: 4434318 (1984-02-01), Gibbons
patent: 4657603 (1987-04-01), Kruehler et al.
patent: 4677250 (1987-06-01), Barnett et al.
patent: 5155051 (1992-10-01), Noguchi et al.
patent: 5221365 (1993-06-01), Noguchi et al.
patent: 5336335 (1994-08-01), Hall et al.

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