Polysilicon TFT having exact alignment between the source/drain

Details Polysilicon TFT having exact alignment between the source/drain Polysilicon TFT having exact alignment between the source/drain

1997-11-19

1999-04-06

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 49, 257 67, 257 72, H01L 2976

Patent

active

058922466

ABSTRACT:
The source-to-drain gap in a TFT is formed by exposing a positive photoresist from the back side of the substrate, using the gate as an optical mask. The resulting photoresist mask then protects the underlying amorphous silicon while the structure is exposed to a gaseous plasma that includes dopant material. Heavily doped regions are thus formed, leaving a gap that is in perfect alignment with the gate. After removal of the photoresist, the structure is given a laser anneal which results both in the crystallization of the amorphous silicon into polysilicon as well as a more even distribution of the dopant material. The structure is completed in the usual way by providing a passivation layer.

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patent: 5548132 (1996-08-01), Batra et al.
patent: 5554861 (1996-09-01), Mano et al.

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