Polysilicon structures resistant to laser anneal lightpipe...

Details Polysilicon structures resistant to laser anneal lightpipe... Polysilicon structures resistant to laser anneal lightpipe...

2011-03-15

2011-03-15

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S381000, C438S382000, C438S535000, C257SE21004, C257SE21008

Reexamination Certificate

active

07906405

ABSTRACT:
Laser scan annealing of integrated circuits offers advantages compared to rapid thermal annealing and furnace annealing, but can induce overheating in regions of components with polysilicon layers. Segmented polysilicon elements to reduce overheating is disclosed, as well as a method of forming components with segments polysilicon elements.

REFERENCES:
patent: 6441339 (2002-08-01), Ueno
patent: 7442625 (2008-10-01), Ito
patent: 2002/0081799 (2002-06-01), Kim
patent: 2005/0048779 (2005-03-01), Ito
patent: 2007/0072382 (2007-03-01), Yamamoto et al.
patent: 2007/0232039 (2007-10-01), Kubo et al.
patent: 2007/0246796 (2007-10-01), Guo et al.

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