Polysilicon semiconductor element having resistivity and work fu

Details Polysilicon semiconductor element having resistivity and work fu Polysilicon semiconductor element having resistivity and work fu

1992-09-24

1994-11-22

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257 66, 257364, 257412, 257655, H01L 29167, H01L 29207, H01L 29227

Patent

active

053671902

ABSTRACT:
A semiconductor device has a semiconductor element comprising polycrystal silicon and into which high-concentration donors and high-concentration acceptors have been introduced in substantially the same amounts, and enables control of a work function of a semiconductor element by adjustment of the concentrations of the donor and acceptor. This semiconductor device is manufactured by the formation of a heat oxide film on a semiconductor substrate, the use of a low-pressure CVD method to form a polysilicon thin film to a required thickness, the implantation in the same high-concentrations of the donor and acceptor into the polysilicon thin film, and heat processing in a required atmosphere, for a required time and at a required temperature to diffuse and activate the injected donor and acceptor.

REFERENCES:
patent: 4755863 (1988-07-01), Maeda et al.
S. T. Hsu, "The Limitation of Short Channel-Length N.sub.30 -Polysilicon-Gate CMOS ICs", RCA Review, vol. 46, Jun. 1985, pp. 153-162.

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