Polysilicon self-aligned bipolar device including trench isolati

Details Polysilicon self-aligned bipolar device including trench isolati Polysilicon self-aligned bipolar device including trench isolati

1990-03-05

1992-04-14

Quach, T. N.

Fishing, trapping, and vermin destroying

437 33, 437 67, 437 78, H01L 21328

Patent

active

051048167

ABSTRACT:
A bipolar transistor formed on the face of a semiconductor substrate which includes an extrinsic base of a first conductivity type formed in a portion of an emitter-base region of said semiconductor. A conducting base contacting layer is formed over the extrinsic base which has a non-conducting spacer formed over a sidewall thereof. An intrinsic base in the emitter-base region is juxtaposed to the extrinsic base. An emitter of a second conductivity type is formed within the intrinsic base with an edge of the emitter being aligned with an outer edge of the spacer. The method includes forming an isolation trench, viewed in plan, having corners that are angled at about 45 degrees.

REFERENCES:
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4196228 (1980-04-01), Priel et al.
patent: 4319932 (1982-03-01), Jambotka
patent: 4381953 (1983-05-01), Ho et al.
patent: 4390393 (1983-06-01), Ghezzo et al.
patent: 4431460 (1984-02-01), Barson et al.
patent: 4470062 (1984-09-01), Muramatsu
patent: 4481706 (1984-11-01), Roche
patent: 4546536 (1985-10-01), Anantha et al.
patent: 4611386 (1986-09-01), Goto
patent: 4631803 (1986-12-01), Hunter et al.
Sze, S. M., VLSI Technology, McGraw-Hill, 1983, pp. 93-106.
Okada, K., et al., "PSA-A New Approach . . . ," IEEE J. of Solid State Circuits, vol. SC-13, No. 5, Oct. 1978, pp. 693-698.
Wieder, A., "Self-Aligned Bipolar Technology . . . ," Siemens Forsch. und Entw. Berichte Bd. 13, 1984, pp. 246-252.

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