Polysilicon Schottky clamped transistor and vertical fuse device

Details Polysilicon Schottky clamped transistor and vertical fuse device Polysilicon Schottky clamped transistor and vertical fuse device

1990-08-22

1992-09-01

Carroll, J.

357 15, 357 34, 357 59, 357 67, 357 71, H01L 2948, H01L 2972, H01L 2904, H01L 2702

Patent

active

051444046

ABSTRACT:
An improved method for fabricating polysilicon Schottky clamped transistors and vertical fuse devices in the same semiconductor structure is disclosed. The resulting structure yields an improved Schottky clamped transistor and vertical fuse device. The improved Schottky transistor has a silicide rectifying contact between the base and collector of the transistor, the vertical fuse is provided with a direct contact between an aluminum contact metal and a polysilicon emitter contact.

REFERENCES:
patent: 3191151 (1965-06-01), Price
patent: 3648125 (1972-03-01), Peltzer
patent: 4624046 (1986-11-01), Shideler et al.
patent: 4649409 (1987-03-01), Roppongi et al.
patent: 4705599 (1987-11-01), Geedee
patent: 4705968 (1987-11-01), Taki
patent: 4731561 (1987-12-01), Yamada
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4754172 (1988-06-01), Ovens et al.
patent: 4764480 (1988-08-01), Vora
patent: 4851715 (1989-07-01), Strong
patent: 4855617 (1989-08-01), Ovens
patent: 4898838 (1990-02-01), Morris et al.
Grove, Physics and Technology of Semiconductor Devices, John Wiley & Sons, 1967, p. 113.
Brockhoff, "Electrically Shorted Semiconductor Junction Utilized as Programmable Read Only Memory Elements" (date unknown).
Peltzer et al., Electronics (Mar. 1, 1971) pp. 53-55.
Bursky, Electronic Design (Oct. 14, 1982) pp. 35-36.

Affiliated with

Also associated with

Rating

Polysilicon Schottky clamped transistor and vertical fuse device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polysilicon Schottky clamped transistor and vertical fuse device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon Schottky clamped transistor and vertical fuse device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-771949