Polysilicon resistors and methods of fabrication

Details Polysilicon resistors and methods of fabrication Polysilicon resistors and methods of fabrication

1991-11-18

1993-08-10

Lateef, Marvin M.

Electrical resistors

With base extending along resistance element

Resistance element and/or terminals printed or marked on base

338306, 338308, 338314, 427 96, 427101, 296101, 437918, H01C 1012

Patent

active

052353125

ABSTRACT:
A semiconductor processing method of forming a resistor device includes, a) providing a layer of conductively doped polysilicon atop a substrate to a selected thickness, the layer of polysilicon having an upper surface and a base, the layer of polysilicon having grain boundaries therewithin which extend from the upper surface to the base and define polysilicon grains; b) oxidizing the polysilicon layer at a temperature from about 850.degree. C. to about 1050.degree. C. for a selected period of time to form SiO.sub.x within the polysilicon layer along the grain boundaries and down to the base to separate individual grains of polysilicon within the layer; and c) patterning the oxidized polysilicon layer to form a resistor device within an integrated circuit.

REFERENCES:
patent: 4489104 (1984-12-01), Lee
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5006421 (1991-04-01), Yang et al.
patent: 5021867 (1991-06-01), Przybysz
patent: 5081439 (1992-01-01), Natzle et al.

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