Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1993-02-08
1995-11-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257754, 257773, 257775, H01C 800
Patent
active
054650054
ABSTRACT:
An integrated circuit device including at least one polysilicon resistor 10 is disclosed herein. A polysilicon layer 24 is formed, possibly over a field oxide 12. The polysilicon layer 24 is then doped to achieve a selected sheet resistance. An insulating layer 18 (e.g., an oxide, a nitride, or a combination thereof) is then formed over the polysilicon layer 24. The insulating layer 18 is patterned and etched to define a resistor body 14 in the underlying polysilicon layer 24. The polysilicon layer 24 is then patterned and etched to define first and second resistor heads 16 abutting the resistor body 14 while simultaneously at least one polysilicon element 28 of a second electronic device is formed. Other systems and methods are also disclosed.
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Chang et al., Bulk Resistors in Integrated Circuits, IBM TDB, vol. 12, No. 1, p. 19, Jun. 1969.
T. H. Ning, Polysilicon Resistor Process for Biopolar and MOS Applications, IBM TDB, vol. 23, No. 1, pp. 368-370, Jun. 1980.
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Eklund Robert H.
Havemann Robert H.
Stroth Leo
Brown Peter Toby
Donaldson Richard L.
Kesterson James C.
Matsil Ira S.
Mintel William
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