Polysilicon resistor structure including polysilicon contacts

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257754, 257773, 257775, H01C 800

Patent

active

054650054

ABSTRACT:
An integrated circuit device including at least one polysilicon resistor 10 is disclosed herein. A polysilicon layer 24 is formed, possibly over a field oxide 12. The polysilicon layer 24 is then doped to achieve a selected sheet resistance. An insulating layer 18 (e.g., an oxide, a nitride, or a combination thereof) is then formed over the polysilicon layer 24. The insulating layer 18 is patterned and etched to define a resistor body 14 in the underlying polysilicon layer 24. The polysilicon layer 24 is then patterned and etched to define first and second resistor heads 16 abutting the resistor body 14 while simultaneously at least one polysilicon element 28 of a second electronic device is formed. Other systems and methods are also disclosed.

REFERENCES:
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patent: 4418468 (1983-12-01), Vora et al.
patent: 4455547 (1984-06-01), Murakam et al.
patent: 4455567 (1984-06-01), Lee et al.
patent: 4653176 (1987-03-01), Van Ommen
patent: 4948747 (1990-08-01), Pfiester
patent: 4949153 (1990-08-01), Hirao et al.
patent: 5013678 (1991-05-01), Winnerl
Chang et al., Bulk Resistors in Integrated Circuits, IBM TDB, vol. 12, No. 1, p. 19, Jun. 1969.
T. H. Ning, Polysilicon Resistor Process for Biopolar and MOS Applications, IBM TDB, vol. 23, No. 1, pp. 368-370, Jun. 1980.
"Method to Form Polysilicon Resistors Along with High-Performance Transistors", C. G. Jambotkar, IBM Technical Disclosure Bulletin, vol. 23, No. 12, May 1981.

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